Low temperature photoluminescence characteristics of chemically synthesized indium doped zinc oxide nanostructures.
Identifieur interne : 002252 ( Main/Exploration ); précédent : 002251; suivant : 002253Low temperature photoluminescence characteristics of chemically synthesized indium doped zinc oxide nanostructures.
Auteurs : RBID : pubmed:19205237Abstract
Photoluminescence (PL) emission and excitation (EPL) spectra of un-doped and indium (1%) doped 1D zinc oxide nanostructures are studied at different temperatures. The nanostructures reveal a blue emission band attributed to localized donor states. Indium doping enhances the blue emission. While at low temperatures (< 50 K) PL spectra are dominated by the emission attributed to the recombination of excitons bound to neutral donors (D(0),X), at higher temperatures (>100 K), defect related emissions in the visible range dominate over the excitonic emission. Temperature dependence measurements on the doped sample reveal that (D(0),X) emission energies obey the Varshni's formula with fitting constants alpha = 8.4 +/- 0.3 x 10(-4) eV/K and beta = 650 +/- 40 K. The (D(0),X) emission intensity decays exponentially with temperature.
PubMed: 19205237
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<author><name sortKey="Escobedo Morales, A" uniqKey="Escobedo Morales A">A Escobedo Morales</name>
<affiliation wicri:level="1"><nlm:affiliation>Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apdo. Postal J-48, CP 72570, Puebla, Pue., México.</nlm:affiliation>
<country xml:lang="fr" wicri:curation="lc">Mexique</country>
<wicri:regionArea>Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apdo. Postal J-48, CP 72570, Puebla, Pue.</wicri:regionArea>
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<author><name sortKey="Aceves, R" uniqKey="Aceves R">R Aceves</name>
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<author><name sortKey="Pal, U" uniqKey="Pal U">U Pal</name>
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<author><name sortKey="Zhang, J Z" uniqKey="Zhang J">J Z Zhang</name>
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<front><div type="abstract" xml:lang="en">Photoluminescence (PL) emission and excitation (EPL) spectra of un-doped and indium (1%) doped 1D zinc oxide nanostructures are studied at different temperatures. The nanostructures reveal a blue emission band attributed to localized donor states. Indium doping enhances the blue emission. While at low temperatures (< 50 K) PL spectra are dominated by the emission attributed to the recombination of excitons bound to neutral donors (D(0),X), at higher temperatures (>100 K), defect related emissions in the visible range dominate over the excitonic emission. Temperature dependence measurements on the doped sample reveal that (D(0),X) emission energies obey the Varshni's formula with fitting constants alpha = 8.4 +/- 0.3 x 10(-4) eV/K and beta = 650 +/- 40 K. The (D(0),X) emission intensity decays exponentially with temperature.</div>
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<Issue>12</Issue>
<PubDate><Year>2008</Year>
<Month>Dec</Month>
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<Title>Journal of nanoscience and nanotechnology</Title>
<ISOAbbreviation>J Nanosci Nanotechnol</ISOAbbreviation>
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<ArticleTitle>Low temperature photoluminescence characteristics of chemically synthesized indium doped zinc oxide nanostructures.</ArticleTitle>
<Pagination><MedlinePgn>6538-44</MedlinePgn>
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<Abstract><AbstractText>Photoluminescence (PL) emission and excitation (EPL) spectra of un-doped and indium (1%) doped 1D zinc oxide nanostructures are studied at different temperatures. The nanostructures reveal a blue emission band attributed to localized donor states. Indium doping enhances the blue emission. While at low temperatures (< 50 K) PL spectra are dominated by the emission attributed to the recombination of excitons bound to neutral donors (D(0),X), at higher temperatures (>100 K), defect related emissions in the visible range dominate over the excitonic emission. Temperature dependence measurements on the doped sample reveal that (D(0),X) emission energies obey the Varshni's formula with fitting constants alpha = 8.4 +/- 0.3 x 10(-4) eV/K and beta = 650 +/- 40 K. The (D(0),X) emission intensity decays exponentially with temperature.</AbstractText>
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